PART |
Description |
Maker |
FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
G10342-54 G10342-14 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
FRM5W232LY |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
G91290-22 |
Connector type: FC; supply voltage: 20V; InGaAs PIN photodiode with preamp: mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps
|
Hamamatsu Corporation
|
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
8C443 |
PIN/Preamp(Datacom, Telecom) 密码/前置放大器(数据通信,电信) PIN/Preamp(Datacom/ Telecom)
|
NXP Semiconductors N.V. Mitel Networks Corporation Mitel Semiconductor
|
FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷放电前置放大器模块,用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk Optoelectronic 光电 InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation] NXP Semiconductors N.V. Hamamatsu Photonics K.K.
|